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| NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. Features http://onsemi.com * * * * * * * * * * Ultra-Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 Power Supplies Inductive Loads PWM Motor Controls Replaces MTP1306 and MTB1306 in Many Applications 75 AMPERES 30 VOLTS RDS(on) = 6.5 m N-Channel D Typical Applications G S 4 1 TO-220AB CASE 221A STYLE 5 2 3 2 3 D2PAK CASE 418B STYLE 2 4 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain E75 N03-06 YWW 1 Gate 3 Source E75 N03-06 YWW 1 Gate 2 Drain 3 Source 2 Drain N03-06 Y WW = Device Code = Year = Work Week ORDERING INFORMATION Device NTP75N03-06 NTB75N03-06 NTB75N03-06T4 Package TO-220 D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800 Tape & Reel (c) Semiconductor Components Industries, LLC, 2000 1 December, 2000 - Rev. 0 Publication Order Number: NTP75N03-06/D NTP75N03-06, NTB75N03-06 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 M) Gate-to-Source Voltage - Continuous Non-repetitive (tp 10 ms) Drain Current - Continuous @ TA = 25_C - Continuous @ TA = 100_C - Single Pulse (tp 10 s) Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C (Note 1.) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. Symbol VDSS VDGB VGS VGS ID ID IDM PD Value 30 30 20 24 75 59 225 150 1.0 2.5 -55 to 150 1500 Unit Vdc Vdc Vdc Vdc Adc Apk W W/_C W _C mJ TJ and Tstg EAS RJC RJA RJA TL 1.0 62.5 50 260 _C/W _C http://onsemi.com 2 NTP75N03-06, NTB75N03-06 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ. Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Note 2.) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS 30 IDSS - - IGSS - - - - 1.0 10 100 nAdc - -57 - - Vdc mVC Adc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (Note 2.) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 2.) (VGS = 10 Vdc, ID = 37.5 Adc) Static Drain-to-Source On Resistance (Note 2.) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125C) Forward Transconductance (Notes 2. & 4.) (VDS = 3 Vdc, ID = 20 Adc) VGS(th) 1.0 - RDS(on) - VDS(on) - - gFS - 0.53 0.35 58 0.68 0.50 - Mhos 5.3 6.5 Vdc 1.6 -6 2.0 - Vdc mVC m DYNAMIC CHARACTERISTICS (Note 4.) Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vd 0, f = 1.0 MHz) Ciss Coss Crss - - - 4398 1160 317 5635 1894 430 pF SWITCHING CHARACTERISTICS (Notes 3. & 4.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 5.0 Vdc, ID = 75 Adc, Ad VDS = 24 Vdc) (Note 2.) (VGS = 5.0 Vdc, 5 0 Vd VDD = 20 Vdc, ID = 75 Adc, RG = 4.7 ) (Note 2.) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 31 510 99 203 52 6.6 28 48 986 120 300 122 28 66 nC ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 75 Adc, VGS = 0 Vdc) (IS = 75 Adc, VGS = 0 Vdc, TJ = 125C) (Note 2.) (IS = 75 Adc, VGS = 0 Vd Ad Vdc dlS/dt = 100 A/s) (Note 2.) VSD - - - - - - 1.19 1.09 37 20 17 0.023 1.25 - - - - - C Vdc Reverse Recovery Time (Note 4 ) (N t 4.) Reverse Recovery Stored Charge (Note 4.) Ch (N t 4 ) trr ta tb QRR ns 2. Pulse Test: Pulse Width v 300 S, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. From characterization test data. http://onsemi.com 3 NTP75N03-06, NTB75N03-06 150 VGS = 3.5 V ID, DRAIN CURRENT (AMPS) 135 120 105 90 75 60 45 30 15 0 0.5 1 1.5 TJ = 25C TJ = 100C 2 2.5 TJ = -55C 3 3.5 4 VDS 10 V 120 ID, DRAIN CURRENT (AMPS) VGS = 4 V VGS = 4.5 V VGS = 5 V VGS = 6 V VGS = 8 V VGS = 10 V 90 60 VGS = 3 V 30 TJ = 25C 0 0 0.2 0.4 0.6 0.8 1 VGS = 2.5 V 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO SOURCE RESISTANCE () RDS(on), DRAIN-TO SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.0085 0.008 0.0075 0.007 0.0065 0.006 0.0055 0.005 0.0045 0.004 10 20 30 40 50 60 70 80 90 100 120 ID, DRAIN CURRENT (AMPS) TJ = -55C TJ = 25C VGS = 5 V TJ = 100C 0.009 TJ = 25C 0.008 0.007 VGS = 5 V VGS = 10 V 0.006 0.005 0.004 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 VGS = 10 V ID = 37.5 A 1.4 IDSS, LEAKAGE (nA) 100 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 125C 1.2 TJ = 100C 10 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTP75N03-06, NTB75N03-06 1200 VGS VDS 1000 C, CAPACITANCE (pF) 800 600 400 Coss 200 Crss 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 10 8 VGS 6 4 2 0 Q1 Q2 15 10 ID = 75 A TJ = 25C 0 4 8 5 QT 30 25 20 Ciss 0 12 16 20 24 28 32 36 40 44 48 52 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Charge 1000 tr IS, SOURCE CURRENT (AMPS) tf 100 td(off) td(on) TJ = 25C ID = 75 A 1 2.2 4.7 6.2 9.1 VDD = 15 V VGS = 5 V 10 20 10 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0.0 VGS = 0 V TJ = 25C t, TIME (ns) 0.2 0.4 0.6 0.8 1.0 RG, GATE RESISTANCE () VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1600 1400 1200 1000 800 600 400 200 0 25 50 75 100 Figure 10. Diode Forward Voltage vs. Current ID = 75 A 125 150 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTP75N03-06, NTB75N03-06 PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 NTP75N03-06, NTB75N03-06 PACKAGE DIMENSIONS D2PAK CASE 418B-03 ISSUE D C E -B- 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A 1 2 3 S -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J TB M STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 7 NTP75N03-06, NTB75N03-06 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTP75N03-06/D |
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